Samsung seems to understand that the future of memory storage will hold and what the future products demand, with the latest unveiling of its UFS 4.0 standard. They are testing their limits with what they can achieve in terms of internal storage which can prove to be essential on future products. It surely does bring a lot more improvements on the existing UFS 3.1 standard.
The UFS 4.0 storage will come with Samsung’s own Gen 7 V-NAND flash memory along with the company’s very own proprietary controller. With the help of this combination, the UFS 4.0 standard will be able to achieve read speeds of 4,200MB/s. This number is clearly higher than what we have seen on the 3.0 standard. In addition to this, the new UFS 4.0 will be able to produce write speeds of up to 2,800MB/s.
“UFS 4.0 offers a speed of up to 23.2Gbps per lane, double that of the previous UFS 3.1. That much bandwidth is perfect for 5G smartphones requiring huge amounts of data processing, and is also expected to be adopted in future automotive applications, AR, and VR as well.”
In terms of efficiency, the 4.0 standard has taken the lead and left behind the 3.0 standard. Samsung claims that with the UFS 4.0 standard, they have provided 46 percent increase in power savings in sequential read speeds compared to the previous gen 3.0. The total bandwidth has also been increased to 23.2. Gbps per lane which is double than that on the 3.0 standard.
The UFS 4.0 standard is also more efficient, with Samsung claiming a 46 percent improvement in power savings when it comes to sequential read speeds compared to the previous generation. Additionally. UFS 4.0 ups the total bandwidth to 23.2Gbps per lane, doubling the maximum limit of UFS 3.1.
With the help of these astounding speeds on the UFS 4.0, the apps will also respond more actively and will open up faster. This is expected to come to par with the NVMe storage which is used by Apple on their iPhones.