Micron has introduced the smallest 2400 model NVMe interface, 22x30mm (M.2 2230) form factor, 2TB NVMe SSD. Micron has taken this initiative as the company has started volume shipments of the first ever 176-layer quad-level cell (QLC) NAND flash memory.
The 2400 model NVMe occupies minimum space, i.e 63 percent less as compared to a standard 22x80mm (M.2 2280) SSD.
The 2TB model is reported to give a sequential read performance of approximately 4,500 MB/s and the sequential write performance goes up to 4,000MB/s. Random read and write IOPS will be as high as 650,000 and 700,000 respectively, along with 600 TBW of endurance rating.
Micron claims that its quad-level cell (QLC) NAND (with 176 layers) guarantees 33% faster I/O speed. Moreover, the read latency is 24 percent lower than the old generation solution. Furthermore, the replacement-gate architecture is the only mass production QLC flash storage to have brought together a CMOS-under-array design and a charge trap.
It is yet to be shown what constitutes “value” but seeing Micron push bigger capacities to the economic market at such speeds is impressive.